Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 5, 1999, Pages 1997-2000

  Wang, Jyh Shyang ^a   Lin, Hao Hsiung ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22844453756     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590860     Document Type: Article

References (5)

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