Growth of Ga0.46In0.54NyAs1-y single quantum wells on InP(100) substrate by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 10, 2000, Pages 5962-5965

  Ubukata, Akinori ^a   Dong, Jie ^a   Matsumoto, Koh ^a   Ishihara, Yoshio ^a  

^a TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; ENERGY GAP; HIGH TEMPERATURE OPERATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PARTIAL PRESSURE; PHASE TRANSITIONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

HIGH GROWTH TEMPERATURE; PHASE SEGREGATION; POST GROWTH ANNEALING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034292173     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5962     Document Type: Article

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