Dilute group III-AsN: Bonding of nitrogen in GaInAsN and AlGaAsN on GaAs and realization of long wavelength (2.3 μm) GaInAsN QWs on InP

Materials Research Society Symposium - Proceedings

Volumn 744, Issue , 2002, Pages 627-636

  Serries, D ^a   Geppert, T ^a   Kohler K ^a   Ganser, P ^a   Wagner, J ^a  

^a FIAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; STRAIN;

ALUMINUM GALLIUM ARSENIC NITRIDE; GALLIUM INDIUM ARSENIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0038488266     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-744-m10.2     Document Type: Conference Paper

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