SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 486-489

  Maier, M ^a   Serries, D ^a   Geppert, T ^a   Kohler K ^a   Gullich H ^a   Herres, N ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Depth profiling; InGaAsN InAlAs; Laser diode; Quantum well; SIMS

Indexed keywords

CALIBRATION; LASER APPLICATIONS; MOLECULAR BEAM EPITAXY; NITROGEN; PLASMA SOURCES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; STANDARDS; X RAY DIFFRACTION ANALYSIS;

DEPTH PROFILING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037437883     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00762-6     Document Type: Conference Paper

References (2)

1. Kondow M., Uomi K., Niwa A., Kitatani T., Watahiki S., Yazawa Y. Jpn. J. Appl. Phys. 35:1996;1273.
2. Maier M., Köhler K., Höppner A., As D.J. J. Appl. Phys. 73:1993;3820.