Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing

Applied Physics Letters

Volumn 80, Issue 22, 2002, Pages 4148-4150

  Tournie E ^a   Pinaulta M A ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; BLUE SHIFT; COMPOSITIONAL CHANGES; EX SITU; GAINNAS; LOW GROWTH TEMPERATURE; PHOTOLUMINESCENCE LINES; PHOTOLUMINESCENCE SPECTRUM; POSTGROWTH ANNEALING; QUANTUM WELL; QUATERNARY MATERIALS; RADIATIVE EFFICIENCY;

ANNEALING; GALLIUM; GALLIUM NITRIDE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

PHOTOLUMINESCENCE;

EID: 79955982807     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481978     Document Type: Article

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