Quantitative evaluation of dopant loss in 5-10 keV as ion implantation for low-resistive, ultrashallow source/drain formation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2324-2328

  Koh, Meishoku ^a,b,c   Egusa, Kazuhiko ^a   Furumoto, Hiroaki ^a   Shirakata, Toru ^a   Seo, Eisuke ^a   Shibahara, Kentaro ^a   Yokoyama, Shin ^a   Hirose, Masataka ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c WASEDA UNIVERSITY   (Japan)

Author keywords

Dopant loss; Dopant pileup; Low energy ion implantation; Scaled MOSFETs; Shallow junction

Indexed keywords

EID: 0010116167     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2324     Document Type: Article

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