Characterization of the ultrathin vertical channel CMOS technology

IEEE Transactions on Electron Devices

Volumn 51, Issue 1, 2004, Pages 106-112

  Liu, Haitao ^a   Sin, Johnny K O ^a   Xuan, Peiqi ^b   Bokor, Jeffrey ^b  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Asymmetric lightly doped drain (LDD); CMOS; Solid phase epitaxy; ULSI; Ultrathin channel; Vertical MOSFET

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; POLYSILICON; STRUCTURE (COMPOSITION); THRESHOLD VOLTAGE; ULSI CIRCUITS; ULTRATHIN FILMS;

SOLID PHASE EPITAXY; ULTRATHIN VERTICAL CHANNEL;

CMOS INTEGRATED CIRCUITS;

EID: 0742286723     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.821388     Document Type: Article

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