Structure of the GaAs(1̄1̄2̄) B surface

Surface Science

Volumn 573, Issue 3, 2004, Pages 457-463

  Suzuki, T ^a   Temko, Y ^a   Xu, M C ^a   Jacobi, K ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

And topography; Gallium arsenide; Growth; Molecular beam epitaxy; Morphology; Roughness; Scanning tunneling microscopy; Single crystal surfaces; Surface structure

Indexed keywords

ANNEALING; DEPOSITION; GROWTH KINETICS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; ONE DIMENSIONAL; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACES;

DENSITY FUNCTIONAL THEORY (DFT); GALLIUM ARSENIDE; SINGLE CRYSTAL SURFACES; SURFACE STRUCTURE, MORPHOLOGY, ROUGHNESS, AND TOPOGRAPHY;

GALLIUM COMPOUNDS;

EID: 10044281723     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.10.013     Document Type: Article

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