Lattice defects in InAs quantum dots on the GaAs(315)B surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 23, 2004, Pages

  Suzuki, T ^a   Temko, Y ^a   Xu, M C ^a   Jacobi, K ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; UNCLASSIFIED DRUG;

ARTICLE; ELECTRON; ENERGY; LUMINESCENCE; QUANTUM MECHANICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR;

EID: 42749105722     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.235302     Document Type: Article

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