High-density GaAs/AlAs quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 5 B, 1996, Pages

  Higashiwaki, Masataka ^a   Yamamoto, Masanori ^a   Higuchi, Takahiro ^a   Shimomura, Satoshi ^a   Adachi, Akira ^a   Okamoto, Yasunori ^a   Sano, Naokatsu ^a   Hiyamizu, Satoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM ARSENIDE; CORRUGATION; INTERFACE CORRUGATION; LATERAL UNIFORMITY; PHOTOLUMINESCENCE PEAK;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030149009     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l606     Document Type: Article

References (9)