The importance of high-index surfaces for the morphology of GaAs quantum dots

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3597-3601

  Platen, J ^a   Kley, A ^a   Setzer, C ^a   Jacobi, K ^a   Ruggerone, P ^a   Scheffler, M ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTATIONAL METHODS; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SENSITIVITY ANALYSIS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

DENSITY-FUNCTIONAL THEORY; LOCAL DENSITY APPROXIMATION (LDA); SPOT-PROFILE ANALYSIS LOW-ENERGY ELECTRON DIFFRACTION (SPA-LEED);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032615495     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369720     Document Type: Article

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