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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 15, 2002, Pages 1553081-15530813

Surface structure of GaAs(2 5 11)

(5) Geelhaar, L a Temko, Y a Marquez J a Kratzer, P a Jacobi, K a

a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE;

ARTICLE; CALCULATION; ELECTRON; ELECTRON DIFFRACTION; ENERGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; STEREORADIOGRAPHY; SURFACE PROPERTY; VACUUM;

EID: 0037089172 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (21)

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