Scanning tunneling microscopy study of the GaAs(112) surfaces

Microelectronics Journal

Volumn 30, Issue 4, 1999, Pages 393-396

  Geelhaar, L ^a   Marquez J ^a   Jacobi, K ^a   Kley, A ^a   Ruggerone, P ^b   Scheffler, M ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^b INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH;

DENSITY-FUNCTIONAL THEORY; HIGH-ENERGY SURFACES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0344287200     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(98)00141-4     Document Type: Article

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