Surface morphology and structure of the bare and InAs-covered GaAs( 3̄ 1̄ 5̄ )B surface

Surface Science

Volumn 548, Issue 1-3, 2004, Pages 333-341

  Suzuki, T ^a   Temko, Y ^a   Xu, M C ^a   Jacobi, K ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

Gallium arsenide; Indium arsenide; Molecular beam epitaxy; Scanning tunneling microscopy; Single crystal surfaces; Surface structure, morphology, roughness, and topography

Indexed keywords

APPROXIMATION THEORY; CRYSTAL LATTICES; DEPOSITION; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SINGLE CRYSTALS; SURFACE ROUGHNESS; VECTORS;

BOUNDING FACETS; ELECTRON COUNTING RULE (ECR);

SURFACES;

EID: 0347411215     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.11.011     Document Type: Article

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