Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surface

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 413-417

  Yasuda, Haruyuki ^a   Matsukura, Fumihiro ^a   Ohno, Yuzo ^a   Ohno, Hideo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

QUANTUM DASHES (QDH); SELF-ORGANIZED NANOSTRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034301896     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00458-X     Document Type: Article

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