Morphology, surface core-level shifts and surface energy of the faceted GaAs(112)A and (1̄1̄2̄)B surfaces

Surface Science

Volumn 439, Issue 1-3, 1999, Pages 59-72

  Jacobi, K ^a   Platen, J ^a   Setzer, C ^a   Maarquez J ^a   Geelhaar, L ^a   Meyne, C ^b   Richter, W ^b   Kley, A ^a   Ruggerone, P ^c   Scheffler, M ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c UniversitadiCagliari I 09042 (CA)   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERFACIAL ENERGY; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PROBABILITY DENSITY FUNCTION; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING BORON; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH INDEX SINGLE CRYSTALS SURFACE; LOW INDEX SINGLE CRYSTALS SURFACE; SURFACE CORE LEVEL SPECTROSCOPY;

SURFACE STRUCTURE;

EID: 0343738873     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00713-X     Document Type: Article

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