Growth nuclei and surface defects on GaAs(1̄ 1̄ 3̄)B

Surface Science

Volumn 511, Issue 1-3, 2002, Pages 13-22

  Suzuki, T ^a   Temko, Y ^a   Jacobi, K ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

Gallium arsenide; Growth; Molecular beam epitaxy; Scanning tunneling microscopy; Single crystal surfaces; Surface defects; Surface structure, morphology, roughness, and topography

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC DISTORTION; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SURFACE ROUGHNESS;

HOMOEPITAXIAL GROWTH;

SURFACE STRUCTURE;

EID: 0036608719     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)01550-9     Document Type: Article

References (18)