Reduced electron mobility due to nitrogen implant prior to the gate oxide growth

IEEE Electron Device Letters

Volumn 21, Issue 5, 2000, Pages 227-229

  Kamgar, Avid ^a   Clemens, J T ^b   Ghetti, A ^a   Liu, C T ^a   Lloyd, E J ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b Athena Research Associates   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER MOBILITY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; ION IMPLANTATION; NITROGEN; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

GATE OXIDE GROWTH; HIGH ENERGY IMPLANTS; LOCAL OXIDATION OF SILICON; NITROGEN IMPLANTATION;

MOSFET DEVICES;

EID: 0033741442     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.841304     Document Type: Article

References (9)

1. C. C. Chang, A. Kamgar, and D. Kahng, "High temperature rapid thermal nitridation of silicon dioxide for future VLSI applications," IEEE Electron Device Lett., vol. EDL-6, p. 476, 1985.
2. C. T. Liu et al., "25Å gate oxide without boron penetration for 0.25 and 0.3-μm pMOSFET's," in VLSI Symp. Tech. Dig., 1996, p. 18.
3. C. T. Liu et al., "Multiple gate oxide thickness for 2GHz system-on-a-chip technologies," in IEDM Tech. Dig., 1998, p. 627.
4. A. Kamgar et al., "Impact of nitrogen implant prior to the gate oxide growth on transient enhanced diffusion," in IEDM Tech. Dig., 1997, p. 695.
5. M. Hargrove et al., "High performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delay," in IEDM Tech. Dig., 1998, p. 589.
6. C.-T. Liu et al., "High performance 0.2 μm CMOS with 25Å gate-oxide grown on nitrogen implanted Si substrates," in IEDM Tech. Dig., 1996, p. 499.
7. A. Ghetti, A. Hamad, P. J. Silverman, H. Vaidya, and N. Zhao, "Self-consistent simulation of quantization effects and tunneling current in ultra-thin gate oxide MOS Devices," in Proc. SISPAD Conf., 1999, p. 239.
8. A. G. Sabnis and J. T. Clemens, "Characterization of electron mobility in the inverted (100) Si surface," in IEDM Tech. Dig., 1979, p. 18.
9. C.-T. Liu, Y. Ma, H. Luftman, and S. J. Hillenius, "Preventing B penetration through 25Å gate oxides with nitrogen implant in the Si substrate," IEEE Electron Device Lett., vol. EDL-18, p. 212, 1997.