Electrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 643-646

  Han, L K ^a   Crowder, S ^a   Hargrove, M ^a   Wu, E ^a   Lo, S H ^a   Guarin, F ^a   Crabbe, E ^a   Su, L ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN IMPLANTED SILICON SUBSTRATES;

CRYSTAL DEFECTS; ELECTRIC PROPERTIES; ION IMPLANTATION; MOSFET DEVICES; OXIDES; SEMICONDUCTOR GROWTH; SILICON WAFERS; SUBSTRATES;

GATES (TRANSISTOR);

EID: 84886448076     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)