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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 299-304

Nitrogen profile effects on the growth rate of gate oxides grown on nitrogen-implanted silicon

(10) Nam, In Ho a Hong, Sung In a Sim, Jae Sung a Park, Byung Gook a Lee, Jong Duk a Lee, Seung Woo b Kang, Man Suk b Kim, Young Wug b Suh, Kwang Pyuk b Lee, Won Seong b

a Seoul National University (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; BORON; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); ION IMPLANTATION; MOS CAPACITORS; MOSFET DEVICES; NITROGEN; OXIDATION; PHOTOLITHOGRAPHY; SURFACE ROUGHNESS;

OXIDATION RETARDATION; TIME-ZERO DIELECTRIC BREAKDOWN (TZDB) MEASUREMENTS;

SEMICONDUCTOR GROWTH;

EID: 0035087301 PISSN: 0734211X EISSN: None Source Type: Journal
DOI: 10.1116/1.1342010 Document Type: Article

Times cited : (4)

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