Manufacturable multiple gate oxynitride thickness technology for system on a chip

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 491-494

  Lee, C H ^a   Luan, H F ^a   Song, S C ^a   Lee, S J ^a   Evans, B ^a   Kwong, D L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; ELECTRIC POWER SUPPLIES TO APPARATUS; GATES (TRANSISTOR); ION IMPLANTATION; LOGIC CIRCUITS; NITROGEN; OXIDATION; OXIDES; PRESSURE EFFECTS; SECONDARY ION MASS SPECTROMETRY;

CAPACITANCE VOLTAGE CHARACTERISTICS; MULTIPLE GATE OXYNITRIDE THICKNESS TECHNOLOGY; OXIDE GROWTH RATE; SYSTEM ON A CHIP; VERTICAL HIGH PRESSURE OXIDATION;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0033345378     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)