25angstrom gate oxide without boron penetration for 0.25 and 0.3-μm PMOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 18-19

  Liu, C T ^a   Ma, Y ^a   Cheung, K P ^a   Chang, C P ^a   Fritzinger, L ^a   Becerro, J ^a   Luftman, H ^a   Vaidya, H M ^a   Colonell, J I ^a   Kamgar, A ^a   Minor, J F ^a   Murray, R G ^a   Lai, W Y C ^a   Pai, C S ^a   Hillenius, S J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); ION IMPLANTATION; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

BORON PENETRATION; GATE OXIDES; GROWTH RATES; HIGH ON CURRENT; HIGH VOLTAGE STRESS; THICKNESS VARIATION;

OXIDES;

EID: 0029723453     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)