-
1
-
-
0025578297
-
2O
-
2O," in IEDM Tech, Dig., 1990, p. 421.
-
(1990)
IEDM Tech, Dig.
, pp. 421
-
-
Hwang, H.1
Ting, W.2
Kwong, D.L.3
Lee, J.4
-
3
-
-
0026908550
-
2O anneal and reoxidation on thermal oxide characteristics
-
2O anneal and reoxidation on thermal oxide characteristics," IEEE Electron Device Lett., vol. 13, p. 402, 1992.
-
(1992)
IEEE Electron Device Lett.
, vol.13
, pp. 402
-
-
Liu, Z.H.1
Wann, H.J.2
Ko, P.3
Hu, C.4
Cheng, Y.C.5
-
4
-
-
0026977469
-
Degradation of junction leakage in devices subjected to gate oxidation in nitrous oxide
-
V. K. Mathews, R. L. Maddox, P. C. Fazan, J. Rosato, H. Hwang, and J. Lee, "Degradation of junction leakage in devices subjected to gate oxidation in nitrous oxide," IEEE Electron Device Lett., vol. 13, p. 648, 1992.
-
(1992)
IEEE Electron Device Lett.
, vol.13
, pp. 648
-
-
Mathews, V.K.1
Maddox, R.L.2
Fazan, P.C.3
Rosato, J.4
Hwang, H.5
Lee, J.6
-
7
-
-
0021201529
-
A reliable approach to charge-pumping measurements in MOS transistors
-
G. Groeseneken, H. E. Maes, N. Beltran, and R. F. de Keersmaecker, "A reliable approach to charge-pumping measurements in MOS transistors," IEEE Trans. Electron Devices, vol. ED-31, p. 42, 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 42
-
-
Groeseneken, G.1
Maes, H.E.2
Beltran, N.3
De Keersmaecker, R.F.4
-
8
-
-
0024705114
-
Analysis of CP technique and its application for the evaluation of MOSFET degradation
-
P. Heremans, J. Witter, G. Groeseneken, and H. E. Maes, "Analysis of CP technique and its application for the evaluation of MOSFET degradation," IEEE Trans. Electron Devices, vol. 36, p. 1318, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 1318
-
-
Heremans, P.1
Witter, J.2
Groeseneken, G.3
Maes, H.E.4
-
10
-
-
0027202869
-
AC versus DC hot-carrier degradation in n-channel MOSFET's
-
K. R. Mistry and B. Doyle, "AC versus DC hot-carrier degradation in n-channel MOSFET's," IEEE Trans. Electron Devices, vol. 40, p. 96, 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 96
-
-
Mistry, K.R.1
Doyle, B.2
-
11
-
-
0026899192
-
Comparison of neutral electron trap generation by hot-carrier stress in NMOSFET's with oxide and oxynitride gate dielectrics
-
A. B. Joshi and D.-L. Kwong, "Comparison of neutral electron trap generation by hot-carrier stress in NMOSFET's with oxide and oxynitride gate dielectrics," IEEE Electron Device Lett., vol. 13, p. 360, 1992.
-
(1992)
IEEE Electron Device Lett.
, vol.13
, pp. 360
-
-
Joshi, A.B.1
Kwong, D.-L.2
-
12
-
-
0001615973
-
2O
-
2O," Appl. Phys. Lett., vol. 63, p. 194, 1993.
-
(1993)
Appl. Phys. Lett.
, vol.63
, pp. 194
-
-
Okada, Y.1
Tobin, P.J.2
Lakhotia, V.3
Feil, W.A.4
Ajuria, S.A.5
Hegde, R.I.6
-
13
-
-
20244380605
-
The impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI
-
E. Hasegawa, M. Kawata, K. Ando, M, Makabe, M. Kitakata, A. Ishitani, L. Manchanda, M. L. Green, K. S. Krisch, and L. C. Feldman, "The impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI," in IEDM Tech. Dig., 1995, p. 327.
-
(1995)
IEDM Tech. Dig.
, pp. 327
-
-
Hasegawa, E.1
Kawata, M.2
Ando, K.3
Makabe, M.4
Kitakata, M.5
Ishitani, A.6
Manchanda, L.7
Green, M.L.8
Krisch, K.S.9
Feldman, L.C.10
-
15
-
-
0027648593
-
2O ambient
-
2O ambient," IEEE Trans. Electron Devices, vol. 40, pp. 1437-1445, 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 1437-1445
-
-
Joshi, A.B.1
Yoon, G.2
Kim, J.3
Lo, G.Q.4
Kwong, D.-L.5
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