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Volumn 18, Issue 2, 1997, Pages 39-41

AC hot-carrier-induced degradation in NMOSFET's with N 2O-based gate dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HOT CARRIERS; MASKS; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SUBSTRATES; TRANSCONDUCTANCE;

EID: 0031075236     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.553037     Document Type: Article
Times cited : (5)

References (15)
  • 8
    • 0024705114 scopus 로고
    • Analysis of CP technique and its application for the evaluation of MOSFET degradation
    • P. Heremans, J. Witter, G. Groeseneken, and H. E. Maes, "Analysis of CP technique and its application for the evaluation of MOSFET degradation," IEEE Trans. Electron Devices, vol. 36, p. 1318, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 1318
    • Heremans, P.1    Witter, J.2    Groeseneken, G.3    Maes, H.E.4
  • 10
    • 0027202869 scopus 로고
    • AC versus DC hot-carrier degradation in n-channel MOSFET's
    • K. R. Mistry and B. Doyle, "AC versus DC hot-carrier degradation in n-channel MOSFET's," IEEE Trans. Electron Devices, vol. 40, p. 96, 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 96
    • Mistry, K.R.1    Doyle, B.2
  • 11
    • 0026899192 scopus 로고
    • Comparison of neutral electron trap generation by hot-carrier stress in NMOSFET's with oxide and oxynitride gate dielectrics
    • A. B. Joshi and D.-L. Kwong, "Comparison of neutral electron trap generation by hot-carrier stress in NMOSFET's with oxide and oxynitride gate dielectrics," IEEE Electron Device Lett., vol. 13, p. 360, 1992.
    • (1992) IEEE Electron Device Lett. , vol.13 , pp. 360
    • Joshi, A.B.1    Kwong, D.-L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.