Theory of threshold characteristics of quantum dot lasers: Effect of quantum dot parameter dispersion

International Journal of High Speed Electronics and Systems

Volumn 12, Issue 1, 2002, Pages 111-176

  Asryan, Levon V ^a,b   Suris, Robert A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; ELECTRON ENERGY LEVELS; GAIN CONTROL; LOW TEMPERATURE EFFECTS; OPTICAL PROPERTIES; QUANTUM WELL LASERS; THRESHOLD VOLTAGE;

GAIN CURRENTS; QUANTUM DOT LASERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0742275619     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156402001149     Document Type: Article

References (53)

1. R. Dingle and C. H. Henry, "Quantum effects in heterostructure lasers", U.S. Patent 3982207, Sept. 21, 1976.
2. Y. Arakawa and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current", Appl. Phys. Lett. 40 (1982) 939-941.
3. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures, John Wiley & Sons, Chichester, 1999, 328 p.
4. N. N. Ledentsov, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maksimov, I. G. Tabatadze, and P. S. Kop'ev, "Optical properties of heterostructures with InGaAs-GaAs quantum clusters", Semicond. 28 (1994) 832-834.
5. 0 injection laser emission from (InGa) As quantum dots", Electron. Lett. 30 (1994) 1416-1417.
6. 0.33As/GaInAsP/InP tensile-strained quantum-box laser", Electron. Lett. 30 (1994) 142-143.
7. J. Temmyo, E. Kuramochi, M. Sugo, T. Nishiya, R. Nötzel, and T. Tamamura, "Strained InGaAs quantum disk laser with nanoscale active region fabricated with self-organisation on GaAs (311)B substrate", Electron. Lett. 31 (1995) 209-211.
8. R. Mirin, A. Gossard, and J. Bowers, "Room temperature lasing from InGaAs quantum dots", Electron. Lett. 32 (1996) 1732-1734.
9. D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop'ev, and V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers", IEEE J. Select. Topics Quantum Electron. 3 (1997) 196-205.
10. N. N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V. M. Ustinov, A. E. Zhukov, M. V. Maximov, Zh. I. Alferov, and J. A. Lott, "Quantum-Dot Heterostructure Lasers", IEEE J. Select. Topics Quantum Electron. 6 (2000) 439-451.
11. P. Bhattacharya, D. Klotzkin, O. Qasaimeh, W. Zhou, S. Krishna, and D. Zhu, "High-Speed Modulation and Switching Characteristics of In(Ga)As-Al(Ga)As Self-Organized Quantum-Dot Lasers", IEEE J. Select. Topics Quantum Electron. 6 (2000) 426-438.
12. L. Harris, D. J. Mowbray, M. S. Skolnick, M. Hopkinson, and G. Hill, "Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers", Appl. Phys. Lett. 73 (1998) 969-971.
13. E. O'Reilly, A. Onishchenko, E. Avrutin, D. Bhattacharyya, and J. H. Marsh, "Longitudinal mode grouping in InGaAs/GaAs/AlGaAs quantum dot lasers: Origin and means of control", Electron. Lett. 34 (1998) 2035-2037.
14. P. M. Smowton, E. J. Johnston, S. V. Dewar, P. J. Hulyer, H. D. Summers, A. Patane, A. Polimeni, and M. Henini, "Spectral analysis of InGaAs/GaAs quantum-dot lasers", Appl. Phys. Lett. 75 (1999) 2169-2171.
15. D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, "Continuous-Wave Low-Threshold Performance of 1.3-μm InGaAs-GaAs Quantum-Dot Lasers", IEEE J. Select. Topics Quantum Electron. 6 (2000) 452-461.
16. M. Sugawara, K. Mukai, Y. Nakata, K. Otsubo, and H. Ishilkawa, "Performance and Physics of Quantum-Dot Lasers with Self-Assembled Columnar-Shaped and 1.3-μm Emitting InGaAs Quantum Dots", IEEE J. Select. Topics Quantum Electron. 6 (2000) 462-474.
17. G. T. Liu, A. Stintz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. J. Malloy, and L. F. Lester, "The Influence of Quantum-Well Composition on the Performance of Quantum Dot Lasers Using InAs/InGaAs Dots-in-a-Well (DWELL) Structures", IEEE J. Quantum Electron. 36 (2000) 1272-1279.
18. V. P. Evtikhiev, I. V. Kudryashov, E. Yu. Kotel'nikov, V. E. Tokranov, A. N. Titkov, I. S. Tarasov, and Zh. I. Alferov, "Continuous stimulated emission at T = 293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region", Semicond. 32 (1998) 1323-1327.
19. J. K. Kim, R. L. Naone, and L. A. Coldren, "Lateral Carrier Confinement in Miniature Lasers Using Quantum Dots", IEEE J. Select. Topics Quantum Electron. 6 (2000) 504-510.
20. M. Asada, Y. Miyamoto, and Y. Suematsu, "Gain and the Threshold of Three-Dimensional Quantum-Box Lasers", IEEE J. Quantum Electron. 22 (1986) 1915-1921.
21. K. J. Vahala, "Quantum box fabrication tolerance and size limits in semiconductors and their effect on optical gain", IEEE J. Quantum Electron. 24 (1988) 523-530.
22. Y. Miyamoto, Y. Miyake, M. Asada, and Y. Suematsu, "Threshold Current Density of GaInAsP/InP Quantum-Box Lasers", IEEE J. Quantum Electron. 25 (1989) 2001-2006.
23. L. V. Asryan and R. A. Suris, "Linewidth broadening and threshold current density of quantum-box laser", in Proc. Int. Symp. "Nanostructures: Physics and Technology", St. Petersburg, Russia, June 1994, pp. 181-184.
24. R. A. Suris and L. V. Asryan, "Quantum-Dot Laser: Gain Spectrum Inhomogeneous Broadening and Threshold Current", in Proc. SPIE's Int. Symp. PHOTONICS WEST'95, San Jose, CA, USA, Feb. 1995, vol. 2399, pp. 433-444.
25. L. V. Asryan and R. A. Suris, "Inhomogeneous Line Broadening and the Threshold Current Density of a Semiconductor Quantum Dot Laser", Semicond. Sci. Technol. 11 (1996) 554-567.
26. L. V. Asryan and R. A. Suris, "Charge neutrality violation in quantum dot lasers", IEEE J. Select. Topics Quantum Electron. 3 (1997) 148-157.
27. L. V. Asryan and R. A. Suris, "Characteristic temperature of quantum dot laser", Electron. Lett. 33 (1997) 1871-1872.
28. L. V. Asryan and R. A. Suris, "Temperature dependence of the threshold current density of a quantum dot laser", IEEE J. Quantum Electron. 34 (1998) 841-850.
29. L. V. Asryan and R. A. Suris, "Spatial hole burning and multimode generation threshold in quantum-dot lasers", Appl. Phys. Lett. 74 (1999) 1215-1217.
30. L. V. Asryan and R. A. Suris, "Role of thermal ejection of carriers in the burning of spatial holes in quantum dot lasers", Semicond. 33 (1999) 981-984.
31. L. V. Asryan and R. A. Suris, "Longitudinal spatial hole burning in a quantum-dot laser", IEEE J. Quantum Electron. 36 (2000) 1151-1160.
32. L. V. Asryan and R. A. Suris, "Carrier photoexcitation from levels in quantum dots to states of the continuum during laser operation", Semicond. 35 (2001) 343-346.
33. N. N. Ledentsov, "Ordered arrays of quantum dots", in Proc. 23rd Int. Conf. Phys. Semicond., vol. 1. Berlin, Germany, July 1996, pp. 19-26.
34. M. Grundmann and D. Bimberg, "Theory of random population for quantum dots", Phys. Rev. B 55 (1997) 9740-9745.
35. H. Benisty, C. M. Sotomayor-Torres, and C. Weisbuch, "Intrinsic mechanism for the poor luminescence properties of quantum-box systems", Phys. Rev. B 44 (1991) 10945-10948.
36. U. Bockelmann and G. Bastard, "Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases", Phys. Rev. B 42 (1990) 8947-8951.
37. U. Bockelmann and T. Egeler, "Electron relaxation in quantum dots by means of Auger processes", Phys. Rev. B 46 (1992) 15574-15577.
38. E. H. Perea, E. E. Mendez, and C. G. Fonstad, "Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide", Appl. Phys. Lett. 36 (1980) 978-980.
39. S. Adachi, "Refractive indices of III-V compounds: Key properties of InGaAsP relevant to device design", J. Appl. Phys. 53 (1982) 5863-5869.
40. 1-y and related binaries", J. Appl. Phys. 53 (1982) 8775-8792.
41. G. P. Agrawal and N. K. Dutta, Long-Wavelength Semiconductor Lasers, Van Nostrand Reinhold Company, New York, 1986, 474 p.
42. D. Leonard, S. Fafard, K. Pond, Y. H. Zhang, J. L. Merz, and P. M. Petroff, "Structural and optical properties of self-assembled InGaAs quantum dots", J. Vac. Sci. Technol. B 12 (1994) 2516-2520.
43. M. Grundmann, R. Heitz, N. Ledentsov, O. Stier, D. Bimberg, V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov, S. S. Ruvimov, P. Werner, U. Gösele, and J. Heydenreich, "Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids", Superlattices and Microstructures 19 (1996) 81-95.
44. M. Sopanen, M. Taskinen, H. Lipsanen, and J. Ahopelto, "Visible luminescence from quantum dots induced by self-organized stressors", in Proc. 23rd Int. Conf. Phys. Semicond., vol. 2. Berlin, Germany, July 1996, pp. 1409-1412.
45. J. I. Pankove, "Temperature dependence of emission efficiency and lasing threshold in laser diodes", IEEE J. Quantum Electron. 4 (1968) 119-122.
46. H. Statz, C. L. Tang, and J. M. Lavine, "Spectral output of semiconductor lasers", J. Appl. Phys. 35 (1964) 2581-2585.
47. M. A. Alam, "Effects of carrier transport on L-I characteristics of QW lasers in the presence of spatial hole burning", IEEE J. Quantum Electron. 33 (1997) 1018-1024.
48. R. A. Suris and S. V. Shtofich, "Multifrequency stimulated emission from injection semiconductor lasers", Soviet Phys. Semicond. 16 (1982) 851-853.
49. R. A. Suris and S. V. Shtofich, "Role of impurities in the appearance of multifrequency emission from injection semiconductor lasers", Soviet Phys. Semicond. 17 (1983) 859-861.
50. L. V. Asryan, M. Grundmann, N. N. Ledentsov, O. Stier, R. A. Suris, and D. Bimberg, "Effect of excited-state transitions on the threshold characteristics of a quantum dot laser", IEEE J. Quantum Electron. 37 (2001) 418-425.
51. L. V. Asryan, M. Grundmann, N. N. Ledentsov, O. Stier, R. A. Suris, D. Bimberg, "Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser", J. Appl. Phys. 90 (2001) 1666-1668.
52. H. Hirayama, J. Yoshida, Y. Miyake, and M. Asada, "Carrier capture time and its effect on the efficiency of quantum-well lasers", IEEE J. Quantum Electron. 30 (1994) 54-62.
53. M. Sugawara, K. Mukai, and Y. Nakata, "Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics", Appl. Phys. Lett. 74 (1999) 1561-1563.