Charge neutrality violation in quantum-dot lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 148-157

  Asryan, L V ^a   Suris, R A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Quantum well lasers; Semiconductor heterojunctions; Semiconductor lasers

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELDS; HETEROJUNCTIONS; OPTIMIZATION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; TRANSPARENCY;

CHARGE NEUTRALITY VIOLATION;

QUANTUM WELL LASERS;

EID: 0031109220     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605647     Document Type: Article

References (12)

1. Y. Arakawa and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett., vol. 40, no. 11, pp. 939-941, June 1982.
2. M. Asada, Y. Miyamoto, and Y. Suematsu, "Gain and the threshold of three-dimensional quantum-box lasers," IEEE J. Quantum Electron., vol. QE-22, pp. 1915-1921, Sept. 1986.
3. Y. Miyamoto, Y. Miyake, M. Asada, and Y. Suematsu, "Threshold current density of GalnAsP/InP quantum-box lasers," IEEE J. Quantum Electron., vol. 25, pp. 2001-2006, Sept. 1989.
4. L. V. Asryan and R. A. Suris, "Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser," Semicond. Sci. Technol., vol. 11, no. 4, pp. 554-567, Apr. 1996.
5. R. A. Suris and L. V. Asryan, "Quantum-dot laser: Gain spectrum inhomogeneous broadening and threshold current," in Proc. SPIE Int. Symp. Photonics West, San Jose, CA, vol. 2399, Feb. 1995, pp. 433-444.
6. 0.33As/GaInAsP/InP tensile-strained quantum-box laser," Electron. Lett., vol. 30, no. 2, pp. 142-143, Jan. 1994.
7. 0 injection laser emission from (InGa)As quantum dots," Electron. Lett., vol. 30, no. 17, pp. 1416-1417, Aug. 1994.
8. Zh. I. Alferov, N. Y. Gordeev, S. V. Zaitsev, P. S. Kop'ev, I. V. Kochnev, V. V. Komin, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, S. S. Ruvimov, A. V. Sakharov, A. F. Tsapul'nikov, Y. M. Shernyakov, and D. Bimberg, "A low-threshold injection heterojunction laser based on quantum dots, produced by gasphase epitaxy from organometallic compounds," Semicond., vol. 30, no. 2, pp. 197-200, Feb. 1996.
9. H. Shoji, Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokoyama, and H. Ishikawa, "Room temperature lasing at lower-order sub-band of self-formed InGaAs quantum dot lasers with multi-stacked dot layers," in Tech. Dig. 15th IEEE Int. Semicond. Laser Conf., Haifa, Israel, Oct. 1996, pp. 43-44.
10. 0.5As quantum dots by current injection," IEEE Photon. Technol. Lett., vol. 7, pp. 1385-1387, Dec. 1995.
11. L. V. Asryan and R. A. Suris, "To the theory of quantum dot lasers: Self-consistent consideration of quantum dot charge," in Tech. Dig. 15th IEEE Int. Semicond. Laser Conf., Haifa, Israel, Oct. 1996, pp. 107-108.
12. _, "Charge neutrality violation in quantum dot lasers," in Proc. 23rd Int. Conf. Phys. Semicond., Berlin, Germany, July 1996, pp. 1369-1372.