Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-μm emitting InGaAs quantum dots

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 6, Issue 3, 2000, Pages 462-474

  Sugawara, Mitsuru ^a   Mukai, Kohki ^a   Nakata, Yoshiaki ^a   Otsubo, Koji ^a   Ishilkawa, Hiroshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; LIGHT EMISSION; MICROELECTRONICS; PHYSICAL PROPERTIES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SPONTANEOUS EMISSION; STIMULATED EMISSION; THERMAL EFFECTS;

CONTINUOUS WAVE; NONRADIATIVE CARRIER; OPTICAL GAIN; QUANTUM DOT LASERS; SELF ASSEMBLED LASERS; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0034187125     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.865101     Document Type: Article

References (37)

1. H. Shoji, "Self-assembled quantum dot lasers," in Semiconductors and Semimetals, M. Sugawara, Ed. San Diego, CA: Academic, 1999, vol. 60, ch. 6.
2. Y. Arakawa and H. Sakaki, "Multidimentional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett., vol. 40, pp. 939-941, 1982.
3. K. Mukai, Y. Nakata, H. Shoji, M. Sugawara, K. Ohtsubo, N. Yokoyama, and H. Ishikawa, "Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots," Electron. Lett., vol. 34, pp. 1588-1560, 1998.
4. Y. Nakata, Y. Sugiyama, K. Mukai, T. Futatsugi, H. Shoji, M. Sugawara, H. Ishikawa, and N. Yokoyama, "Colummar shaped InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy," in Proc. Int. Conf. Compound Semiconductors, Nara, Japan, 1998.
5. M. Sugawara, K. Mukai, H. Ishikawa, K. Otsubo, and Y. Nakata, "The latest news," in Semiconductors and Semimetals, M. Sugawara, Ed. San Diego, CA: Academic, 1999, vol. 60, ch. 6.
6. G. Park, D. L. Huffaker, Z. Zou, O. B. Shckekin, and D. G. Deppe, "Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers," IEEE Photon. Technol. Lett., vol. 11, pp. 301-303, 1999.
7. D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, "1.3-μ m room-temperature GaAs-based quantum-dot laser," Appl. Phys. Lett., vol. 73, pp. 2564-2566, 1998.
8. K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, and H. Ishikawa, "Low threshold (8 mA) 1.3-μm CW lasing of InGaAs/InAs quantum dots at room temperature," in Proc. Conf. Lasers Electro-Optics'99, Baltimore, MD, 1999. Postdeadline paper 18.
9. _, "1.3-μm CW lasing of InGaAs/GaAs quantum dots at room temperature with a threshold current of 8 mA," IEEE Photon. Technol. Lett., vol. 11, Oct. 1999.
10. N. Carlsson, K. Georgsson, L. Montelius, L. Samuelson, W. Seifert, and R. Wallenberg, "Improved size homogeneity of InP-on-GaInP Stanski-Krastanow islands by growth on a thin GaP interface layer," J. Cryst. Growth, vol. 156, no. 23, 1995.
11. C. M. Reaves, V. Bressler-Hill, S. Varma, W. H. Weinberg, and S. P. DenBaars, "Characterization of MOCVD-grown InP on InGaP/GaAs (001)," Surf. Sci., vol. 326, p. 209, 1995.
12. M. Arita, A. Avramescu, K. Uesugi, I. Suemune, T. Numai, H. Machida, and N. Shimoyama, "Self-organized CdSe quantum dots on (100) ZnSe/GaAs surfaces grown by metalorganic molecular beam epitaxy," Jpn. J. Appl. Phys., vol. 36, p. 4097, 1997.
13. 1-xN surfaces using a surfactant," Appl. Phys. Lett., vol. 69, p. 4096, 1996.
14. Y. Nakata, Y. Sugiyama, and M. Sugawara, "Molecular beam epitaxial growth of self-assembled InAs/GaAs quantum dots," in Semiconductors and Semimetals, M. Sugawara, Ed. San Diego, CA: Academic, 1999, vol. 60, ch. 2.
15. 0.5As quantum dots on GaAs substrate emitting at 1.3μm," Jpn. J. Appl. Phys., vol. 33, pp. L1710-L1712, 1994.
16. D. L. Huffaker and D. G. Deppe, "Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots," Appl. Phys. Lett., vol. 73, pp. 520-522, 1998.
17. R. Murray, D. Childs, S. Malik, P. Siverns, C. Roberts, J.-M. Hartmann, and P. Stavrinou, "1.3-μm room temperature emission from InAs/GaAs self-assembled quantum dots," Jpn. J. Appl. Phys., vol. 38, pp. 528-530, 1999.
18. 0.8As grown on GaAs substrate," Appl. Phys. Lett., vol. 74, pp. 1111-1113, 1999.
19. K. Mukai, M. Sugawara, M. Egawa, and N. Ohtsuka, "Self-assembled InGaAs quantum dots," in Semiconductors and Semimetals, M. Sugawara, Ed. New York: Academic, 1999, vol. 60, ch. 3.
20. G. Park, D. L. Huffaker, Z. Zou, O. B. Shckekin, and D. G. Deppe, "Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers," IEEE Photon. Technol. Lett., vol. 11, pp. 301-303, 1999.
21. H. Shoji, Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokoyama, and H. Ishikawa, "Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer," Electron. Lett., vol. 32, pp. 2023-2024, 1996.
22. M. Sugawara, K. Mukai, and Y. Nakata, "Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics," Appl. Phys. Lett., vol. 74, p. 1561, 1999.
23. L. Harris, D. J. Mowbray, M. S. Skolnic, M. Hopkinson, and G. Hill, "Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers," Appl. Phys. Lett., vol. 73, p. 969, 1998.
24. A. E. Zhukov et al., "Negative characteristic temperature of InGaAs quantum dot injection laser," Jpn. J. Appl. Phys., vol. 37, pp. 4216-4218, 1997.
25. M. Sugawara, "Theoretical bases of the optical properties of semiconductor quantum nanostructures," in Semiconductors and Semimetals, M. Sugawara, Ed. San Diego, CA: Academic, 1999, vol. 60, ch. 1.
26. A. Sakamoto and M. Sugawara, "Theoretical calculation of lasing spectra of quantum-dot lasers: Effect of homogeneous broadening of optical gain," Photon. Technol. Lett., vol. 12, pp. 107-109, Feb. 2000.
27. M. Sugawara, "Theory of spontaneous emission lifetime of Wannier excitons in mesoscopic semiconductor quantum disks," Phys. Rev., vol. B51, p. 10,743, 1995.
28. M. Sugawara, K. Mukai, and Y. Nakata, "Temperature characteristics of threshold currents of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Influence of nonradiative recombination centers," Appl. Phys. Lett., vol. 75, p. 656, 1999.
29. K. Mukai, N. Otsuka, and M. Sugawara, "High photoluminescence efficiency of InGaAs/GaAs quantum dots self-formed by atomic layer epitaxy technique," Appl. Phys. Lett., vol. 70, p. 2416, 1997.
30. M. Sugawara, K. Mukai, and H. Shoji, "Effect of phonon bottleneck on quantum-dot laser performance," Appl. Phys. Lett., vol. 71, p. 2791, 1997.
31. Y. Toda, O. Moriwaki, M. Nishioka, and Y. Arakawa, "Resonant Raman scattering of optical phonos in self-assembled quantum dots," in Proc. 9th Int. Conf. Modulated Semiconductor Structures, Fukuoka, Japan, 1999.
32. H. Ishikawa, "Application of quantum dot to optical devices," in Semiconductors and Semimetals, M. Sugawara, Ed. San Diego, CA: Academic Press, 1999, vol. 60, ch. 7.
33. M. Grundmann et al., "Ultranarrow luminescence lines from single quantum dots," Phys. Rev. Lett., vol. 72, p. 3382, 1995.
34. K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, and G. Weimann, "Sharp-lime photoluminescence and two-photon absorption of zero-dimensional biexcitons in a GaAs/AlGaAs structure," Phys. Rev. Lett., vol. 73, p. 1138, 1994.
35. M. Nirmal, B. O. Dabbousi, M. G. Bawendi, J. J. Macklin, J. K. Trautman, T. D. Harris, and L. E. Brus, "Fluorescence intermittency in single cadmium selenide nanocrystals," Nature, vol. 383, p. 802, 1996.
36. A. L. Efros and M. Rosen, "Random telegraph signal in the photoluminescence intensity of a single quantum dot," Phys. Rev. Lett., vol. 78, p. 1110, 1997.
37. K. Mukai and M. Sugawara, "Suppression of temperature sensitivity of interband emission energy in 1.3-μm-region by an InGaAs overgrowth on self-assembled InGaAs/GaAs quantum dots," Appl. Phys. Lett.,