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Volumn 33, Issue 6, 1997, Pages 1018-1024

Effects of carrier transport on the L-I characteristics of QW lasers in the presence of spatial hole burning

Author keywords

Carrier transport; Linearity in lasers; Quantum well lasers; Semiconductor device modeling; Semiconductor lasers

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; PHOTONS; SEMICONDUCTOR DEVICE MODELS;

EID: 0031164963     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.585490     Document Type: Article
Times cited : (7)

References (10)
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  • 2
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  • 3
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    • Schindler, G.M.1
  • 5
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    • Simple analysis of carrier transport and build-up in separate confinement heterostructure quantum well lasers
    • M. A. Alam and M. S. Lundstrom, "Simple analysis of carrier transport and build-up in separate confinement heterostructure quantum well lasers," IEEE Photon. Technol. Lett., vol. 6, pp. 1418-1420, 1994.
    • (1994) IEEE Photon. Technol. Lett. , vol.6 , pp. 1418-1420
    • Alam, M.A.1    Lundstrom, M.S.2
  • 6
    • 0021466451 scopus 로고
    • Power characteristics of single mode semiconductor lasers
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  • 7
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    • A reassessment of standard rate equations for low facet reflectivity semiconductor lasers using traveling wave equations
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    • Thedrez, B.J.1    Lee, C.H.2
  • 8
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    • Prentice-Hall Series in Solid State Physical Electronics, 2nd ed. Englewood Cliffs, NJ: Prentice-Hall
    • J. T. Verdeyen, Laser Electronics, Prentice-Hall Series in Solid State Physical Electronics, 2nd ed. Englewood Cliffs, NJ: Prentice-Hall, 1989, pp. 241-248.
    • (1989) Laser Electronics , pp. 241-248
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  • 9
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    • A. A. Grinberg, J. Appl. Phys., vol. 75, no. 1. pp. 7669-7680, 1994.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.