Longitudinal mode grouping in InGaAs/ GaAs/AIGaAs quantum dot lasers: Origin and means of control

Electronics Letters

Volumn 34, Issue 21, 1998, Pages 2035-2037

  O'Reilly, E P ^a   Onischenko, A I ^a   Avrutin, E A ^b   Bhattacharyya, D ^b   Marsh, J H ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; EMISSION SPECTROSCOPY; LASER MODES; LIGHT INTERFERENCE; LIGHT MODULATION; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

LASER SPECTRA; QUANTUM DOT LASERS; QUASIPERIODIC MODULATION;

SEMICONDUCTOR LASERS;

EID: 0032181013     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981397     Document Type: Article

References (7)

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3. LEOPARD, D., KRISHNAMURTHY, M., REAVES, CM., DEBAARS, S.P., and PETROFF, P.M.: 'Direct formation of quantum-size dots from uniform coherent islands of InGaAs on GaAs surfaces', Appl. Phys. Lett., 1993, 63, (23), pp. 3203-3205
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