-
1
-
-
21544475375
-
Multidimensional quantum well laser and temperature dependence of its threshold current
-
June
-
Y. Arakawa and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett., vol. 40, no. 11, pp. 939-941, June 1982.
-
(1982)
Appl. Phys. Lett.
, vol.40
, Issue.11
, pp. 939-941
-
-
Arakawa, Y.1
Sakaki, H.2
-
2
-
-
0028499029
-
0 injection laser emission from (InGa)As quantum dots
-
Aug.
-
0 injection laser emission from (InGa)As quantum dots," Electron. Lett., vol. 30, no. 17, pp. 1416-1417, Aug. 1994.
-
(1994)
Electron. Lett.
, vol.30
, Issue.17
, pp. 1416-1417
-
-
Kirstaedter, N.1
Ledentsov, N.N.2
Grundmann, M.3
Bimberg, D.4
Ustinov, V.M.5
Ruvimov, S.S.6
Maximov, M.V.7
Kop'ev, P.S.8
Alferov, Zh.I.9
Richter, U.10
Werner, P.11
Gösele, U.12
Heydenreich, J.13
-
3
-
-
0031108828
-
InGaAs-GaAs quantum-dot lasers
-
Apr.
-
D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop'ev, and V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 196-205, Apr. 1997.
-
(1997)
IEEE J. Select. Topics Quantum Electron.
, vol.3
, pp. 196-205
-
-
Bimberg, D.1
Kirstaedter, N.2
Ledentsov, N.N.3
Alferov, Zh..I.4
Kop'ev, P.S.5
Ustinov, V.M.6
-
4
-
-
0032683532
-
1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition
-
May
-
Yu. M. Shernyakov, D. A. Bedarev, E. Yu. Kondrat'eva, P. S. Kop'ev, A. R. Kovsh, N. A. Maleev, M. V. Maximov, S. S. Mikhrin, A. F. Tsatsul'nikov, V. M. Ustinov, B. V. Volovik, A. E. Zhukov, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg, "1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition," Electron. Lett., vol. 35, no. 11, pp. 898-900, May 1999.
-
(1999)
Electron. Lett.
, vol.35
, Issue.11
, pp. 898-900
-
-
Shernyakov, Yu.M.1
Bedarev, D.A.2
Kondrat'eva, E.Yu.3
Kop'ev, P.S.4
Kovsh, A.R.5
Maleev, N.A.6
Maximov, M.V.7
Mikhrin, S.S.8
Tsatsul'nikov, A.F.9
Ustinov, V.M.10
Volovik, B.V.11
Zhukov, A.E.12
Alferov, Zh.I.13
Ledentsov, N.N.14
Bimberg, D.15
-
5
-
-
0007677696
-
Continuous stimulated emission at T = 293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region
-
Dec.
-
V. P. Evtikhiev, I. V. Kudryashov, E. Yu. Kotel'nikov, V. E. Tokranov, A. N. Titkov, I. S. Tarasov, and Zh. I. Alferov, "Continuous stimulated emission at T = 293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region," Semicond., vol. 32, no. 12, pp. 1323-1327, Dec. 1998.
-
(1998)
Semicond.
, vol.32
, Issue.12
, pp. 1323-1327
-
-
Evtikhiev, V.P.1
Kudryashov, I.V.2
Kotel'nikov, E.Yu.3
Tokranov, V.E.4
Titkov, A.N.5
Tarasov, I.S.6
Alferov, Zh.I.7
-
6
-
-
0029632478
-
Strained InGaAs quantum disk laser with nanoscale active region fabricated with self-organization on GaAs (311)B substrate
-
Feb.
-
J. Temmyo, E. Kuramochi, M. Sugo, T. Nishiya, R. Nötzel, and T. Tamamura, "Strained InGaAs quantum disk laser with nanoscale active region fabricated with self-organization on GaAs (311)B substrate," Electron. Lett., vol. 31, no. 3, pp. 209-211, Feb. 1995.
-
(1995)
Electron. Lett.
, vol.31
, Issue.3
, pp. 209-211
-
-
Temmyo, J.1
Kuramochi, E.2
Sugo, M.3
Nishiya, T.4
Nötzel, R.5
Tamamura, T.6
-
7
-
-
0030217389
-
Room temperature lasing from InGaAs quantum dots
-
Aug.
-
R. Mirin, A. Gossard, and J. Bowers, "Room temperature lasing from InGaAs quantum dots," Electron. Lett., vol. 32, no. 18, pp. 1732-1734, Aug. 1996.
-
(1996)
Electron. Lett.
, vol.32
, Issue.18
, pp. 1732-1734
-
-
Mirin, R.1
Gossard, A.2
Bowers, J.3
-
8
-
-
0030188718
-
0.6As/GaAs self-organized quantum dot lasers
-
July
-
0.6As/GaAs self-organized quantum dot lasers," Electron. Lett., vol. 32, no. 15, pp. 1374-1375, July 1996.
-
(1996)
Electron. Lett.
, vol.32
, Issue.15
, pp. 1374-1375
-
-
Kamath, K.1
Bhattacharya, P.2
Sosnowski, T.3
Norris, T.4
Phillips, J.5
-
9
-
-
0000923738
-
Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers
-
Aug.
-
L. Harris, D. J. Mowbray, M. S. Skolnick, M. Hopkinson, and G. Hill, "Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers," Appl. Phys. Lett., vol. 73, no. 7, pp. 969-971, Aug. 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, Issue.7
, pp. 969-971
-
-
Harris, L.1
Mowbray, D.J.2
Skolnick, M.S.3
Hopkinson, M.4
Hill, G.5
-
10
-
-
0033100686
-
Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers
-
Mar.
-
G. Park, D. L. Huffaker, Z. Zou, O. B. Shchekin, and D. G. Deppe, "Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers," IEEE Photon. Technol. Lett., vol. 11, pp. 301-303, Mar. 1999.
-
(1999)
IEEE Photon. Technol. Lett.
, vol.11
, pp. 301-303
-
-
Park, G.1
Huffaker, D.L.2
Zou, Z.3
Shchekin, O.B.4
Deppe, D.G.5
-
11
-
-
0001100515
-
Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics
-
Mar.
-
M. Sugawara, K. Mukai, and Y. Nakata, "Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics," Appl. Phys. Lett., vol. 74, no. 11, pp. 1561-1563, Mar. 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, Issue.11
, pp. 1561-1563
-
-
Sugawara, M.1
Mukai, K.2
Nakata, Y.3
-
12
-
-
0032599103
-
1.25 μm low threshold current density dots-in-a-well (DWELL) lasers
-
San Diego, CA, July
-
G. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, "1.25 μm low threshold current density dots-in-a-well (DWELL) lasers," in Conf. Dig. IEEE/LEOS Summer Topical Meeting on Nanostructures and Quantum Dots, San Diego, CA, July 1999, pp. 19-20.
-
(1999)
Conf. Dig. IEEE/LEOS Summer Topical Meeting on Nanostructures and Quantum Dots
, pp. 19-20
-
-
Liu, G.T.1
Stintz, A.2
Li, H.3
Malloy, K.J.4
Lester, L.F.5
-
14
-
-
0000966985
-
Spectral output of semiconductor lasers
-
Sept.
-
H. Statz, C. L. Tang, and J. M. Lavine, "Spectral output of semiconductor lasers," J. Appl. Phys., vol. 35, no. 9, pp. 2581-2585, Sept. 1964.
-
(1964)
J. Appl. Phys.
, vol.35
, Issue.9
, pp. 2581-2585
-
-
Statz, H.1
Tang, C.L.2
Lavine, J.M.3
-
15
-
-
0031164963
-
Effects of carrier transport on L-I characteristics of QW lasers in the presence of spatial hole burning
-
June
-
M. A. Alam, "Effects of carrier transport on L-I characteristics of QW lasers in the presence of spatial hole burning," IEEE J. Quantum Electron., vol. 33, pp. 1018-1024, June 1997.
-
(1997)
IEEE J. Quantum Electron.
, vol.33
, pp. 1018-1024
-
-
Alam, M.A.1
-
16
-
-
0030128727
-
Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser
-
Apr.
-
L. V. Asryan and R. A. Suris, "Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser," Semicond. Sci. Technol., vol. 11, no. 4, pp. 554-567, Apr. 1996.
-
(1996)
Semicond. Sci. Technol.
, vol.11
, Issue.4
, pp. 554-567
-
-
Asryan, L.V.1
Suris, R.A.2
-
17
-
-
0031109220
-
Charge neutrality violation in quantum dot lasers
-
Apr.
-
_, "Charge neutrality violation in quantum dot lasers," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 148-157, Apr. 1997.
-
(1997)
IEEE J. Select. Topics Quantum Electron.
, vol.3
, pp. 148-157
-
-
-
18
-
-
0032072095
-
Temperature dependence of the threshold current density of a quantum dot laser
-
May
-
_, "Temperature dependence of the threshold current density of a quantum dot laser," IEEE J. Quantum Electron., vol. 34, pp. 841-850, May 1998.
-
(1998)
IEEE J. Quantum Electron.
, vol.34
, pp. 841-850
-
-
-
19
-
-
0343132310
-
Multifrequency stimulated emission from injection semiconductor lasers
-
July
-
R. A. Suris and S. V. Shtofich, "Multifrequency stimulated emission from injection semiconductor lasers," Sov. Phys. Semicond., vol. 16, no. 7, pp. 851-853, July 1982.
-
(1982)
Sov. Phys. Semicond.
, vol.16
, Issue.7
, pp. 851-853
-
-
Suris, R.A.1
Shtofich, S.V.2
-
20
-
-
0009171674
-
Role of impurities in the appearance of multifrequency emission from injection semiconductor lasers
-
July
-
_, "Role of impurities in the appearance of multifrequency emission from injection semiconductor lasers," Sov. Phys. Semicond., vol. 17, no. 7, pp. 859-861, July 1983.
-
(1983)
Sov. Phys. Semicond.
, vol.17
, Issue.7
, pp. 859-861
-
-
-
21
-
-
0033685441
-
Effect of excited-state transitions on the threshold characteristics of a quantum dot laser
-
San Jose, CA, Jan.
-
L. V. Asryan, M. Grundmann, N. N. Ledentsov, O. Stier, R. A. Suris, and D. Bimberg, "Effect of excited-state transitions on the threshold characteristics of a quantum dot laser," in Proc. SPIE's Int. Symp. PHOTONICS WEST, vol. 3944, San Jose, CA, Jan. 2000, pp. 823-834.
-
(2000)
Proc. SPIE's Int. Symp. PHOTONICS WEST
, vol.3944
, pp. 823-834
-
-
Asryan, L.V.1
Grundmann, M.2
Ledentsov, N.N.3
Stier, O.4
Suris, R.A.5
Bimberg, D.6
-
22
-
-
0343568203
-
-
W. T. Tsang, Ed. New York: Academic, ch. 2.
-
K. Y. Lau and A. Yariv, Semiconductors and Semimetals, W. T. Tsang, Ed. New York: Academic, 1985, pt. B, vol. 22, ch. 2.
-
(1985)
Semiconductors and Semimetals
, vol.22
, Issue.PART B
-
-
Lau, K.Y.1
Yariv, A.2
-
23
-
-
0028253143
-
Carrier capture time and its effect on the efficiency of quantum-well lasers
-
Jan.
-
H. Hirayama, J. Yoshida, Y. Miyake, and M. Asada, "Carrier capture time and its effect on the efficiency of quantum-well lasers," IEEE J. Quantum Electron., vol. 30, pp. 54-62, Jan. 1994.
-
(1994)
IEEE J. Quantum Electron.
, vol.30
, pp. 54-62
-
-
Hirayama, H.1
Yoshida, J.2
Miyake, Y.3
Asada, M.4
|