Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region

Semiconductors

Volumn 32, Issue 12, 1998, Pages 1323-1327

  Evtikhiev, V P ^a   Kudryashov, I V ^a   Kotel'nikov, E Yu ^a   Tokranov, V E ^a   Titkov, A N ^a   Tarasov, I S ^a   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007677696     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187622     Document Type: Article

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