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Volumn 6, Issue 3, 2000, Pages 504-510

Lateral carrier confinement in miniature lasers using quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CATHODOLUMINESCENCE; CHARGE CARRIERS; COMPUTER SIMULATION; DIFFUSION; ELECTRIC CURRENTS; MICROELECTRONICS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

EID: 0034187187     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.865105     Document Type: Article
Times cited : (25)

References (13)
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  • 3
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    • Design parameters for lateral carrier confinement in quantum-dot lasers
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    • (1999) Appl. Phys. Lett. , vol.74 , pp. 2752-2754
    • Kim, J.K.1    Strand, T.A.2    Naone, R.L.3    Coldren, L.A.4
  • 4
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    • Electron and hole tunneling in a moderate density quantum-dot ensemble with shallow confinement potentials
    • D. L. Huffaker and D. G. Deppe, "Electron and hole tunneling in a moderate density quantum-dot ensemble with shallow confinement potentials," Appl. Phys. Lett., vol. 73, pp. 366-369, 1998.
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 366-369
    • Huffaker, D.L.1    Deppe, D.G.2
  • 5
    • 0031119550 scopus 로고    scopus 로고
    • Reduced lateral carrier diffusion for improved miniature semiconductor lasers
    • T. Strand, B. Thibeault, and L. A. Coldren, "Reduced lateral carrier diffusion for improved miniature semiconductor lasers," J. Appl. Phys., vol. 81, pp. 3377-3381, 1997.
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  • 7
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    • Determination of design parameters for lateral carrier localization in quantum-dot lasers
    • Orlando, FL
    • J. K. Kim, T. A. Strand, R. L. Naone, and L. A. Coldren, "Determination of design parameters for lateral carrier localization in quantum-dot lasers," in Conf. Proc. LEOS'98, vol. 1, Orlando, FL, pp. 111-112.
    • Conf. Proc. LEOS'98 , vol.1 , pp. 111-112
    • Kim, J.K.1    Strand, T.A.2    Naone, R.L.3    Coldren, L.A.4
  • 8
    • 0000840409 scopus 로고
    • Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs QW ridge-waveguide lasers
    • S. Hu, S. Corzine, K. Law, D. Young, A. Gossard, and L. A. Coldren. "Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs QW ridge-waveguide lasers," J. Appl. Phys., vol. 76, pp. 4479-4487, 1994.
    • (1994) J. Appl. Phys. , vol.76 , pp. 4479-4487
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  • 9
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    • The effects of lateral current spreading, carrier out-diffusion, and optical mode losses on the threshold current density of GaAs/AlGaAs stripe-geometry DH lasers
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    • Tsang, W.1
  • 10
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  • 12
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    • Epitaxially-stacked multiple-active-region 1.55 μm lasers for increased differential efficiency
    • J. K. Kim, E. Hall, O. Sjölund, and L. A. Coldren, "Epitaxially-stacked multiple-active-region 1.55 μm lasers for increased differential efficiency," Appl. Phys. Lett., vol. 74, pp. 3251-3253, 1999.
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  • 13
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    • J. K. Kim, E. Hall, O. Sjölund, G. Almuneau, and L. A. Coldren, "Room-temperature, electrically-pumped, multiple-active-region VCSEL's with high differential efficiency at 1.55μm," Electron. Lett., vol. 35, pp. 1084-1085, 1999.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.