Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

Applied Physics Letters

Volumn 80, Issue 7, 2002, Pages 1228-1230

  Knap, W ^a   Borovitskaya, E ^a   Shur, M S ^a   Hsu, L ^b   Walukiewicz, W ^c   Frayssinet, E ^d   Lorenzini, P ^d   Grandjean, N ^d   Skierbiszewski, C ^e   Prystawko, P ^e   Leszczynski, M ^e   Grzegory, I ^e  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b UNIVERSITY OF MINNESOTA   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d CRHEA CNRS   (France)

^e INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC-PHONON SCATTERING; ALGAN/GAN HETEROSTRUCTURES; BAND DEFORMATION; CRUCIAL PARAMETERS; GAN SUBSTRATE; HIGH-MOBILITY HETEROSTRUCTURES; LINEAR DEPENDENCE; TEMPERATURE DEPENDENCE;

ACOUSTIC WAVE SCATTERING; CRYSTALS; ELECTROMAGNETIC WAVE EMISSION; GALLIUM NITRIDE; PHONON SCATTERING; PHONONS; TEMPERATURE DISTRIBUTION; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

CARRIER MOBILITY;

EID: 79956055905     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1448401     Document Type: Article

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