GaN HFETs and MODFETs with very high breakdown voltage and large transconductance

Annual Device Research Conference Digest

Volumn , Issue , 1996, Pages 60-61

  Wu, Y F ^a   Keller, B P ^a   Keller, S ^a   Kapolnek, D ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; NUCLEATION; OHMIC CONTACTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DIODES; TRANSCONDUCTANCE;

CHARGE DENSITY; GALLIUM NITRIDE; HIGH ELECTRON SATURATION VELOCITY; OHMIC CONTACT RESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0029703420     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)