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Volumn 33, Issue 12, 1986, Pages 8291-8303
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Mobility of the two-dimensional electron gas at selectively doped n -type AlxGa1-xAs/GaAs heterojunctions with controlled electron concentrations
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0000021494
PISSN: 01631829
EISSN: None
Source Type: Journal
DOI: 10.1103/PhysRevB.33.8291 Document Type: Article |
Times cited : (299)
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References (36)
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