Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

Journal of the Electrochemical Society

Volumn 150, Issue 9, 2003, Pages

  Simoen, E ^a   Claeys, C ^a,b   Job, R ^c   Ulyashin, A G ^c   Fahrner, W R ^c   Tonelli, G ^d   De Gryse, O ^e   Clauws, P ^e  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF HAGEN   (Germany)

^d INFN SEZIONE DI PISA   (Italy)

^e GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HYDROGENATION; OXYGEN; SILICON;

OXYGEN THERMAL DONORS (OTD);

ELECTROCHEMISTRY;

EID: 0141453461     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1595665     Document Type: Article

References (44)

1. G. Tonelli, Nucl. Instrum. Methods Phys. Res. A, 386, 129 (1997).
2. A. Ruzin, G. Casse, M. Glaser, and F. Lemeilleur, Nucl. Instrum. Methods Phys. Res. A, 426, 94 (1999).
3. B. Dezillie, Z. Li, V. Eremin, W. Chen, and L. J. Zhao, IEEE Trans. Nucl. Sci., 47, 1892 (2000).
4. V. B. Neimash, V. M. Siratskii, A. M. Kraichinskii, O. O. Puzenko, C. Claeys, and E. Simoen, in High Purity Silicon V, C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H. J. Dawson, Editors, PV 98-13, p. 200, The Electrochemical Society Proceedings Series, Pennington, NJ (1998).
5. I. Buehler, E. Kasper, P. Russer, and K. M. Strohm, IEEE Trans. Electron Devices, 33, 2047 (1986).
6. D. Beck, M. Herrmann, and E. Kasper, IEEE Trans. Electron Devices, 44, 1091 (1997).
7. R. Job, W. R. Fahrner, N. N. Kazuchits, and A. G. Ulyashin, Mater. Res. Soc. Symp. Proc., 513, 337 (1998).
8. L. Fonseca, M. Lozano, F. Campabadal, C. Martínez, M. Ullán, B. S. Avset, A. Ruzin, F. Lemmeilleur, and E. Nossarzewska-Orlowska, Microelectron. Reliab., 40, 791 (2000).
9. R. Job, A. G. Ulyashin, W. R. Fahrner, E. Simoen, C. Claeys, and G. Tonelli, Nucl. Instrum. Methods Phys. Res. B, 186, 116 (2002).
10. E. Simoen, K. De Backker, C. Claeys, and P. Clauws, J. Electron. Mater., 21, 533 (1992).
11. C. Claeys, P. Clauws, B. Dierickx, H. Maes, E. Simoen, J. Vanhellemont, G. Willems, and D. Wouters, Abstract 422, p. 624, The Electrochemical Society Extended Abstracts, Vol. 92-2, Toronto, Ontario, Canada, Oct 11-16, 1992.
12. J. Li, J. Appl. Phys., 70, 511 (1991).
13. H. S. Kim, E. K. Kim, and S.-K. Min, J. Appl. Phys., 69, 6979 (1991).
14. J. Vanhellemont, E. Simoen, A. Kaniava, M. Libezny, and C. Claeys, J. Appl. Phys., 77, 5669 (1995).
15. M. Koizuka and H. Yamada-Kaneta, J. Appl. Phys., 84, 4255 (1998).
16. T. McHedlidze, K. Matsumoto, and E. Asano, Jpn. J. Appl. Phys., Part 1, 38, 3426 (1999).
17. E. Yakimov, D. Feklisova, A. Castaldini, A. Cavallini, S. Cadeo, and S. Pizzini, Mater. Sci. Semicond. Process., 2, 69 (1999).
18. R. C. Newman. Mater. Sci. Eng., B, 36, 1 (1996).
19. E. Simoen, C. Claeys, R. Job, A. G. Ulyashin, W. R. Fahrner, O. De Gryse, and P. Clauws, Appl. Phys. Lett., 81, 1842 (2002).
20. R. Job, A. G. Ulyashin, Y. Huang, W. R. Fahrner, E. Simoen, C. Claeys, F.-J. Niedernostheide, H.-J. Schulze, and G. Tonelli, Mater. Res. Soc. Symp. Proc., 719, 257 (2002).
21. A. Ulyashin, R. Job, W. Fahrner, O. Richard, H. Bender, C. Claeys, E. Simoen, and D. Grambole, J. Phys.: Condens. Matter, 14, 13037 (2002).
22. J. L. Benton, L. C. Kimerling, and M. Stavola, Physica B, 116, 271 (1983).
23. P. Clauws, O. De Gryse, E. Simoen, and C. Claeys, Unpublished results.
24. H. Lefèvre, Appl. Phys., 22, 15 (1980).
25. H. Lefèvre, Appl. Phys. A: Solids Surf., 29, 105 (1982).
26. T. Hasegawa and S. Matsumoto, Jpn. J. Appl. Phys., Part 1, 27, 1906 (1988).
27. E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, and N. B. Strokan, Sov. Phys. Semicond., 26, 1101 (1992).
28. M. Alietti, F. Nava, R. Tonini, P. Cantoni, L. Stagni, and A. Cavallini, Nucl. Instrum. Methods Phys. Res. A, 337, 394 (1994).
29. E. V. Astrova, V. B. Voronkov, V. A. Kozlov, and A. A. Lebedev, Semicond. Sci. Technol., 13, 488 (1998).
30. W. von Ammon, R. Hölzl, J. Virbulis, E. Domberger, R. Schmolke, and D. Gräf, in Proceedings of GADEST 2001, V. Raineri, F. Priolo, M. Kittler, and H. Richter, Editors, in Solid State Phenom., 82-84, 17 (2002).
31. E. Simoen, C. Claeys, R. Job, A. G. Ulyashin, W. R. Fahrner, O. De Gryse, P. Clauws, and G. Tonelli, in Semiconductor Silicon 2002, H. R. Huff, L. Fabry, and S. Kishino, Editors, PV 2002-2, p. 912, The Electrochemical Society Proceedings Series, Pennington, NJ (2002).
32. Y. Tokumaru, H. Okushi, T. Masui, and T. Abe, Jpn. J. Appl. Phys., Part 1, 21, L443 (1982).
33. K. Nauka, M. S. Goorsky, H. C. Gatos, and J. Lagowski, Appl. Phys. Lett., 47, 1341 (1985).
34. L. Jastrzebski, G. W. Cullen, R. Soydan, H. Harbeke, J. Lagowski, S. Vecrumba, and W. N. Henry, J. Electrochem. Soc., 134, 466 (1987).
35. H. Itoh, K. Murakami, K. Takita, and K. Masuda, J. Appl. Phys., 61, 4862 (1987).
36. J. L. Benton, M. T. Asom, R. Sauer, and L. C. Kimerling, Mater. Res. Soc. Symp. Proc., 104, 85 (1988).
37. G. D. Watkins, in Defects in Silicon III, T. Abe, W. M. Bullis, S. Kobayashi, W. Lin, and P. Wagner, Editors, PV 99-1, p. 38, The Electrochemical Society Proceedings Series, Pennington, NJ (1999).
38. O. A. Soltanovich, O. V. Feklisova, and E. B. Yakimov, Solid State Phenom., 82-84, 150 (2002).
39. R. Gleichmann, Mater. Res. Soc. Symp. Proc., 25, 287 (1984).
40. L. T. Canham, M. R. Dyball, and K. G. Barraclough, J. Appl. Phys., 66, 920 (1989).
41. T. Zundel, J. Weber, B. Benson, P. O. Hahn, A. Schnegg, and H. Prigge, Appl. Phys. Lett., 53, 1426 (1986).
42. H. Prigge, P. Gerlach, P. O. Hahn, A. Schnegg, and H. Jacob, J. Electrochem. Soc., 138, 1385 (1991).
43. E. Rotsaert, P. Clauws, E. Simoen, and J. Vennik, Solid State Commun., 77, 415 (1991).
44. J. A. Griffin, J. Hartung, J. Weber, H. Navarro, and L. Genzel, Appl. Phys. A: Solids Surf., 48, 41 (1989).