Gap states caused by oxygen precipitation in Czochralski silicon crystals

Journal of Applied Physics

Volumn 84, Issue 8, 1998, Pages 4255-4258

  Koizuka, M ^a   Yamada Kaneta, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013156795     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368642     Document Type: Article

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