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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 116-120

Hydrogen enhanced thermal donor formation in oxygen enriched high resistive float-zone silicon

(6) Job, R a Ulyashin, A G a Fahrner, W R a Simoen, E b Claeys, C b,c Tonelli, G d

a UNIVERSITY OF HAGEN (Germany)

b IMEC (Belgium)

c UNIVERSITY OF LEUVEN (Belgium)

d INFN SEZIONE DI PISA (Italy)

Author keywords

Float zone silicon; Hydrogen; Oxygen; Radiation detectors; Thermal donors

Indexed keywords

ANNEALING; COLLIDING BEAM ACCELERATORS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; HYDROGEN; HYDROGENATION; OXYGEN; RADIATION DETECTORS; SEMICONDUCTOR DOPING; SUBSTRATES;

FLOAT-ZONE (FZ) SILICON; THERMAL DONORS (TD);

SEMICONDUCTING SILICON;

EID: 0036136058 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(01)00894-1 Document Type: Article

Times cited : (6)

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