Substrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated silicon

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13037-13045

  Ulyashin, A G ^a   Job, R ^a   Fahrner, W R ^a   Richard, O ^b   Bender, H ^b   Claeys, C ^b   Simoen, E ^b   Grambole, D ^c  

^a UNIVERSITY OF HAGEN   (Germany)

^b IMEC   (Belgium)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DOPING (ADDITIVES); HYDROGENATION; MOLECULES; PLASMAS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; STACKING FAULTS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

NUCLEAR REACTION ANALYSIS; PLASMA FREQUENCY DEPENDENCIES; PLASMA HYDROGENATION; PLASMA TREATMENT; STRUCTURAL DEFECT FORMATION;

SEMICONDUCTING SILICON;

EID: 0037122027     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/349     Document Type: Article

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