Silicon wafer oxygenation from SiO2 layers for radiation hard detectors

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 791-794

  Fonseca, L ^a   Lozano, M ^a   Campabadal, F ^a   Martinez C ^a   Ullan M ^a   Avset, B S ^b   Ruzin, A ^c   Lemeilleur, F ^c   Nossarzewska Orlowska, E ^d  

^a CSIC   (Spain)

^b SINTEF   (Norway)

^c CERN   (Switzerland)

^d Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; RADIATION DAMAGE; SILICA;

RADIATION HARD DETECTORS;

SILICON WAFERS;

EID: 0033731892     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00292-9     Document Type: Article

References (6)

1. Second CERN RD48 status report. CERN/LHCC 98-39, CERN, Geneva, October 1998.
2. ROSE Meeting, RD48. CERN/LEB 99-8. CERN, Geneva, June 1999.
3. Ruzin A, Casse G, Glaser M, Lemeilleur F, Matheson J, Watts S, Zanet A. Radiation effects in silicon detectors processed on carbon and oxygen rich substrates. ROSE/TN/ 99-5 Technical Report. CERN, Geneva. 1999.
4. Casse G. Introduction of high oxygen concentrations into silicon wafers by high temperature diffusion. ROSE/TN/99-1 Technical Report. CERN, Geneva. 1999.
5. WACKER Product Specification 1021. Hyperpure silicon crystals crucible pulled CZ. March 1986.
6. WACKER Product Specification 1022. Hyperpure silicon crystals float zone (FZ) WASO. March 1986.