Studies of radiation hardness of oxygen enriched silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 426, Issue 1, 1999, Pages 94-98

  Ruzin, A ^a   Casse, G ^a   Glaser, M ^a   Lemeilleur, F ^a  

^a CERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; OXYGEN; RADIATION HARDENING; SEMICONDUCTING SILICON; SILICON SENSORS;

SEMICONDUCTOR DETECTORS;

PARTICLE DETECTORS;

EID: 0032636690     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)01476-4     Document Type: Article

References (10)

1. MacEvoy B.C., Hall G., Gill K. Nucl. Instr. and Meth. A. 374:1996;12.
2. Moll M., Feick H., Fretwurst E., Lindstrom G., Schutze C. Nucl. Instr. and Meth. A. 388:1997;335.
3. Li Z., Chen W., Dou L., Kraner H.W., Li C.J., Lindstrom G., Spiriti E. IEEE Trans. Nucl. Sci. NS-42(4):1995;219.
4. ITME - Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919, Warszawa, Poland.
5. ITE - Institute of Electron Technology, Al. Lotnikow 32/46, 02-668, Warszawa, Poland.
6. Sze S.M. Physics of Semiconductor Devices. 2nd ed. 1981;Wiley-Interscience, New York.
7. TRIGA reactor at Jozef Stefan Institute, Ljubljana, Slovenia.
8. Zontar D.et al. Nucl. Instr. and Meth. A. 426:1999;51.
9. EVANS EUROPA, Brunel University, Uxbridge, Middlesex UB8 3PH, UK.
10. Fretwurst E., Feick H., Glaser M., Gossling C., Heijne E.H.M., Hess A., Lemeilleur F., Lindstrom G., Mahlmann K.H., Rolf A., Schulz T., Soave C. Nucl. Instr. and Meth. A. 342:1994;119.