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Volumn 82-84, Issue , 2002, Pages 17-24

On the mechanism of defect suppression in nitrogen-doped silicon single crystals

(6) Von Ammon, W a Holzl R a Virbulis, J a Dornberger, E a Schmolke, R a Graf D a

Author keywords

Defect aggregation; Nitrogen; Oxygen; Silicon; Vacancy; Voids

Indexed keywords

AGGLOMERATION; CHEMICAL ANALYSIS; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL GROWTH; DOPING (ADDITIVES); MATHEMATICAL MODELS; NITROGEN; OXYGEN; REACTION KINETICS; SINGLE CRYSTALS; THERMAL EFFECTS;

DEFECT SUPPRESSION; FLOATING ZONE GROWN CRYSTALS; INTERSTITIAL AGGREGATION; REACTION SHIFTS; VACANCY AGGREGATES;

SILICON;

EID: 0036131240 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: None Document Type: Conference Paper

Times cited : (14)

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