Oxygen precipitate precursors and low temperature gettering processes. II. DLTS analysis of deep levels associated to oxide precipitates

Materials Science in Semiconductor Processing

Volumn 2, Issue 1, 1999, Pages 69-74

  Yakimov, E ^a   Feklisova, D ^a   Castaldini, A ^b   Cavallini, A ^b   Cadeo, S ^c   Pizzini, S ^c  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c UNIVERSITY OF MILAN   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; LOW TEMPERATURE OPERATIONS; OXYGEN;

THERMAL DONORS;

SILICON WAFERS;

EID: 0032653072     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(99)00006-2     Document Type: Article

References (13)

1. Seifert W., Kittler M., Vanhellemont J. Mater. Sci. Eng. B. 42:1996;260-264.
2. Hwang J.M., Schroder D.K. J. Appl. Phys. 59:1986;2476-2487.
3. Matsumoto S., Kaneko H., Sasao T. von Bardeleben H.J. Defects in semiconductors. Material Science Forum. Vol. 10-12:1986;1003-1006 Trans Tech Publications.
4. Kim H.S., Kim E.K., Min S.-K. J. Appl. Phys. 69:1991;6979-6981.
5. Claeys C., Simon E., Vanhellemont J. J. Phys. III. 7:1997;1469-1486.
6. Pizzini S., Cadeo S., Acciarr M., Cavallini A., Mater. Sci. Process Semiconduct. Proc. 2:1999;57-68.
7. Miller L., Ramirez J.V., Robinson D.A.H. J. Appl. Phys. 46:1975;2638.
8. Pantellides ST, Ramanoorty M. presented at the MRS Fall Meeting, Nov. 1997.
9. Aristov V.V., Vemer P., Snigireva I.I., Kbodos I.I., Yakimov E.B., Yarykin N.A. Fiz. Tech. Poluprovodn. 20:1986;907-909. (In Russian, Transl. in Sov. Phys. Semicond., 20, 571-573 (1986)).
10. Bondarenko I.E., Yakimov E.B., Yarykin N.A. Acta Phys. Polon. A. 69:1986;393-395.
11. Yakimov E.B. J. Phys. III (France). 7:1997;2293.
12. Cavalcoli D., Cavallini A., Gombia E. Phys. Rev. B. 56:1997;10028.
13. Koveshnikov S.V., Feklisova O.V., Yakimov E.B., Yarykin N.A. Phys. Status Solidi (a). 67-73:1991;127.