The effect of oxygen impurities on radiation hardness of FZ silicon detectors for HEP after neutron, proton and gamma irradiation

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 I, 2000, Pages 1892-1897

  Dezillie, B ^a   Li, Z ^a   Eremin, V ^a   Chen, W ^a   Zhao, L J ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; GAMMA RAYS; NEUTRON IRRADIATION; OXIDATION; OXYGEN; PARTICLE DETECTORS; PROTON IRRADIATION; SILICON; THERMAL EFFECTS;

HIGH TEMPERATURE LONG TIME OXYGEN DIFFUSION; RADIATION HARDNESS;

RADIATION HARDENING;

EID: 0034450466     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.914465     Document Type: Conference Paper

References (12)

1. eff) of neutron irradiated silicon detectors fabricated by various thermal oxidation processes
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3. eff) of neutron irradiated silicon detectors fabricated by various thermal oxidations
4. Results of radiation hardness of diodes processed from various silicon materials
5. Physics of semiconductor devices
6. Oxygen, carbon, hydrogen, and nitrogen in silicon
7. Oxygen, carbon, hydrogen, and nitrogen in silicon
8. eff) in the space charge region of p-n junction detectors
9. Damage results from Co-60 gamma irradiation in silicon diodes fabricated from different materials
10. 60CO γ-radiation
11. Carrier removal in neutron irradiated silicon
12. The physics of radiation damage in particle detectors