Electrical activity of defects induced by oxygen precipitation in Czochralski-grown silicon wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 A, 1999, Pages 3426-3432

  Mchedlidze, Teimouraz ^a   Matsumoto, Kei ^a   Asano, Eiichi ^a  

^a Komatsu Electronic Metals Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTOR GROWTH;

CARRIER TRAPS;

SILICON WAFERS;

EID: 0032640572     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3426     Document Type: Article

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