Hydrogen-related defects in high-resistivity silicon

Solid State Phenomena

Volumn 82-84, Issue , 2002, Pages 150-154

  Soltanovich, O A ^a   Feklisova, O V ^a   Yakimov, E B ^a  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

Deep levels; Hydrogen; Si; Wet chemical etching

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ETCHING; EVAPORATION; HYDROGEN; SCHOTTKY BARRIER DIODES;

HIGH RESISTIVITY SILICON; HYDROGEN RELATED DEFECTS; WET CHEMICAL ETCHING;

SEMICONDUCTING SILICON;

EID: 0036131557     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (15)