Can the Density Gradient Approach Describe the Source-Drain Tunnelling in Decanano Double-Gate MOSFETs?

Journal of Computational Electronics

Volumn 1, Issue 1-2, 2002, Pages 289-293

  Watling, J R ^a   Brown, A R ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

density gradient; double gate MOSFET; simulation; tunnelling

Indexed keywords

QUANTUM THEORY; THRESHOLD VOLTAGE; TUNNELING (EXCAVATION);

DENSITY GRADIENTS; DOUBLE GATE MOSFET; DOUBLE-GATE MOSFET DEVICES; DOUBLE-GATE MOSFETS; QUANTUM MECHANICAL; QUANTUM MECHANICAL CONFINEMENT; SIMULATION; THRESHOLD VOLTAGE SHIFTS;

MOSFET DEVICES;

EID: 0042111732     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1020758431804     Document Type: Article

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