Impact of the velocity overshoot on the performance of NMOSFETs with gate lengths from 80 to 250nm

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 236-239

  Jungemann, C ^a   Meinerzhagen, B ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; MONTE CARLO METHODS;

DRIFT-DIFFUSION SIMULATION; FULL-BAND MONTE CARLO; GATE LENGTH; ION ENHANCEMENTS; NMOSFETS; VELOCITY OVERSHOOT;

MOSFET DEVICES;

EID: 84907898433     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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2. M. Tomizawa, K. Yokoyama, and A. Yoshii, "Non stationary carrier dynamics in quarter-micron Si MOSFETs", IEEE Trans. Computer-Aided Des., vol. CAD-7, pp. 254-258, 1988.
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7. M. Lundstrom, "Scattering theory of the short channel MOSFET", in IEDM Tech. Dig., 1996, pp. 387-390.