-
1
-
-
0034272680
-
Electron transport in a model Si transistor
-
K. Banoo and M. S. Lundstrom, "Electron transport in a model Si transistor," Solid-State Electron., vol. 44, pp. 1689-1695, 2000.
-
(2000)
Solid-State Electron.
, vol.44
, pp. 1689-1695
-
-
Banoo, K.1
Lundstrom, M.S.2
-
2
-
-
0033712947
-
MOSFET modeling into the ballistic regime
-
Seattle (U.S.A.), Sept.
-
J. D. Bude, "MOSFET modeling into the ballistic regime," in Proc. SISPAD, Seattle (U.S.A.), Sept. 2000, pp. 23-26.
-
(2000)
Proc. SISPAD
, pp. 23-26
-
-
Bude, J.D.1
-
3
-
-
35949009958
-
Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
-
M. V. Fischetti and S. E. Laux, "Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects," Phys. Rev. B, vol. 38, pp. 9721-9745, 1988.
-
(1988)
Phys. Rev. B
, vol.38
, pp. 9721-9745
-
-
Fischetti, M.V.1
Laux, S.E.2
-
4
-
-
0027694792
-
Time stability of Monte Carlo device simulation
-
P. W. Rambo and J. Denavit, "Time stability of Monte Carlo device simulation," IEEE Trans. Computer-Aided Des., vol. 12, pp. 1734-1741, 1993.
-
(1993)
IEEE Trans. Computer-Aided Des.
, vol.12
, pp. 1734-1741
-
-
Rambo, P.W.1
Denavit, J.2
-
5
-
-
0000135289
-
Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors
-
A. Duncan, U. Ravaioli, and J. Jakumeit, "Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors," IEEE Trans. Electron Devices, vol. 45, pp. 867-876, 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 867-876
-
-
Duncan, A.1
Ravaioli, U.2
Jakumeit, J.3
-
6
-
-
0033357461
-
Efficient full-band Monte Carlo simulation of silicon devices
-
C. Jungemann, S. Keith, M. Bartels, and B. Meinerzhagen, "Efficient full-band Monte Carlo simulation of silicon devices," IEICE Trans. Electron., vol. E82-C, pp. 870-879, 1999.
-
(1999)
IEICE Trans. Electron.
, vol.E82-C
, pp. 870-879
-
-
Jungemann, C.1
Keith, S.2
Bartels, M.3
Meinerzhagen, B.4
-
7
-
-
0034295786
-
Ultrasmall MOSFETs: The importance of the full Coulomb interaction on device characteristics
-
W. J. Gross, D. Vasileska, and D. K. Ferry, "Ultrasmall MOSFETs: The importance of the full Coulomb interaction on device characteristics," IEEE Trans. Electron Devices, vol. 47, pp. 1831-1837, 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 1831-1837
-
-
Gross, W.J.1
Vasileska, D.2
Ferry, D.K.3
-
8
-
-
0024647039
-
A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFET's
-
F. Venturi, R. K. Smith, E. C. Sangiorgi, M. R. Pinto, and B. Riccó, "A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFET's," IEEE Trans. Computer-Aided Des., vol. 8, pp. 360-369, 1989.
-
(1989)
IEEE Trans. Computer-Aided Des.
, vol.8
, pp. 360-369
-
-
Venturi, F.1
Smith, R.K.2
Sangiorgi, E.C.3
Pinto, M.R.4
Riccó, B.5
-
9
-
-
0034295825
-
Efficient Monte Carlo device modeling
-
F. M. Bufler, A. Schenk, and W. Fichtner, "Efficient Monte Carlo device modeling," IEEE Trans. Electron Devices, vol. 47, pp. 1891-1897, 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 1891-1897
-
-
Bufler, F.M.1
Schenk, A.2
Fichtner, W.3
-
10
-
-
0033711577
-
Efficient Monte Carlo device simulation with automatic error control
-
Seattle (U.S.A.), Sept.
-
F. M. Bufler, A. Schenk, and W. Fichtner, "Efficient Monte Carlo device simulation with automatic error control," in Proc. SISPAD, Seattle (U.S.A.), Sept. 2000, pp. 27-30.
-
(2000)
Proc. SISPAD
, pp. 27-30
-
-
Bufler, F.M.1
Schenk, A.2
Fichtner, W.3
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