Polarity of high-quality indium nitride grown by RF molecular beam epitaxy

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 13-16

  Saito, Y ^a   Tanabe, Y ^a   Yamaguchi, T ^a   Teraguchi, N ^b   Suzuki, A ^b   Araki, T ^a   Nanishi, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541049     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<13::AID-PSSB13>3.0.CO;2-H     Document Type: Article

References (8)

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