Growth temperature dependences of MOVPE InN on sapphire substrates

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 5-8

  Yamamoto, A ^a   Murakami, Y ^a   Koide, K ^a   Adachi, M ^a   Hashimoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541047     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<5::AID-PSSB5>3.0.CO;2-E     Document Type: Article

References (6)

1. S. K. O'REARLY, B. E. FOUTZ, M. S. SHUR, U. V. BHAPKER, and L. F. EASTMAN, J. Appl. Phys. 83, 826 (1998).
2. C. R. ABERNATHY, GaN and Related Materials, Vol. 2, Chap. 2, Ed. ST. J. PEARTON, Gordon & Breach, New York/London 1997 (p. 11).
3. S. YAMAGUCHI, M. KARIYA, S. NITTA, T. TAKEUCHI, C. WETZEE, H. AMANO, and I. AKASAKI, J. Appl. Phys. 85, 7682 (1999).
4. Y. SAITO, N. TERAGUCHI, A. SUZUKI, T. ARAKI, and Y. NANISHI, Jpn. J. Appl. Phys. 40, L91 (2001).
5. M. ADACHI, Y. MURAKAMI, A. HASHIMOTO, and A. YAMAMOTO, Proc. Internat. Workshop Nitride Semiconductors, Nagoya, IPAP Conf. Series 1, 339 (2000).
6. A. YAMAMOTO, T. SHIN-YA, T. SUGIURA, and A. HASHIMOTO, J. Cryst. Growth. 189/190, 461 (1998).